A 2D Gallium
MESFET has been simulated by means of Archimedes, in order to show its
capabilities of simulating submicron MESFETs. This devices in made of
Gallium Arsenide, and is simulated at 77 Kelvin (liquid Nitrogen
temperature). Archimedes takes into account all the relevant scattering
machanisms in such GaAs devices for such particular temperature
We report, in the following, various pictures showing the results for
electrons at stationary state, while it, obviously, possibile to study
the transient behaviour of such device by means of Archimedes. At the
end of this page, we report the ASCII input file for the simulation of
this particular device.
Here, we report the electron density in the GaAs MESFET for the total
density, the GAMMA-valley density and the L-valley density respectively.
The energy of electrons, after 6 picoseconds, looks as in the
The electrostatic potential is reported below.
And, finally, we report the graphics for x- and y-
electron velocity component respectively.
We report in the following the ASCII input file for the
simulation of such a device by means of Archimedes.
# GaAs MESFET test-1
# This file simulate a GaAs MESFET at 77 Kelvin
TRANSPORT MC ELECTRONS
# Definition of the Impurity Concentration
# Definition of the doping concentration
0. 0. 0.75e-6 0.2e-6 1.e22
0. 0. 0.25e-6 0.2e-6 1.e24
0. 0.75e-6 0.2e-6 1.e24
# Definition of the various contacts
0.0 0.20e-6 INSULATOR
CONTACT RIGHT 0.0
CONTACT UP 0.0
CONTACT UP 0.25e-6
CONTACT UP 0.55e-6
CONTACT DOWN 0.0
# end of MESFET test-1