A 2D Germanium
MESFET has been simulated by means of Archimedes, in order to show its
capabilities of simulating submicron MESFETs. This devices in made of
Germanium. Archimedes takes into account all the relevant scattering
machanisms in such Germanium devices.
We report, in the following, various pictures showing the results for
electrons at stationary state, while it, obviously, possibile to study
the transient behaviour of such device by means of Archimedes. At the
end of this page, we report the ASCII input file for the simulation of
this particular device.
Here, we report the electron density in the Germanium MESFET.
The energy of electrons, after 6 picoseconds, looks as in the
The electrostatic potential is reported below.
And, finally, we report the graphics for x- and y-
electric field component respectively.
We report in the following the ASCII input file for the
simulation of such a device by means of Archimedes.
# Germanium MESFET test-1
TRANSPORT MC ELECTRONS
# Definition of the doping concentration
0. 0. 0.6e-6 0.2e-6 1.e23
0. 0.15e-6 0.1e-6 0.2e-6 3.e23
0.5e-6 0.15e-6 0.6e-6 0.2e-6 3.e23
0. 0. 0.6e-6 0.2e-6 1.e20
# Definition of the various contacts
0.0 0.6e-6 INSULATOR
CONTACT LEFT 0.0
CONTACT RIGHT 0.0
CONTACT UP 0.1e-6
CONTACT UP 0.4e-6
CONTACT UP 0.0 0.1e-6
OHMIC 0.0 3.e23
CONTACT UP 0.2e-6
CONTACT UP 0.5e-6
# end of MESFET test-1