following, we present some IV curves calculated by means of Archimedes.
These curves show the electric features of an quantum well InSb FET (Field
Effects Transistor). The structure of such a device is schematically
reported in the following picture.
Starting from the top of the device, we have a 20
layer with the Source (Ohmic contact), the Gate (Schottky contact) and
the Drain (Ohmic contact again). Then we have the InSb quantum well with
a thikness equal to 50 nanometers. Finally, we find a 0.5 micron Al0.2In0.8Sb
again along with a Schottky contact with an applied potential equal to
-0.5 Volt (also known as the bulk potential).
Archimedes is well suited for such
heterostructures since it is able to quantum mechanically calculate the
transmission and reflection coefficient for the particles at such
Varying the applied potential on the various contacts of
this device, it is possible to calculate its IV curves. This has been
done by means of Archimedes, our 2D semiconductor device simulator.
In the following we report three IV curves obtained by
Archimedes, with the following applied potentials :
Vsource = 0.0, Vbulk = -0.5, Vgate = -0.2, 0.0, +0.2,
Vdrain = from 0.0 to 0.5
Finally, we report the following IV curve obtained by
Archimedes, with the following applied potentials:
Vsource = 0.0, Vbulk = -0.5, Vgate = from -0.5 to +0.5,
Vdrain = 0.5