A diode can also use a MOSFET model (type

When the element is printed out, by a

`AREA`=*x*- Area factor. (Default = 1.0) If optional
parameters
`IS`,`RS`, and`CJO`are not specified, the`.model`value is multiplied by`area`to get the actual value.

`PERIM`=*x*- Perimeter factor. (Default = 1.0) If
optional parameter
`CJSW`is not specified, the`.model`value is multiplied by`perim`to get the actual value.

`IC`=*x*- Initial condition. The initial voltage to
use in transient analysis, if the
`UIC`option is specified. Default: don't use initial condition. This is presently ignored, but accepted for compatibility.

`OFF`- Start iterating with this diode off, in DC analysis.

`IS`=*x*- Saturation current. This overrides
`IS`in the`.model`, and is not affected by`area`. Default: use`IS`from`.model`*`area`.

`RS`=*x*- Ohmic (series) resistance. This overrides
`RS`in the`.model`, and is not affected by`area`. Default: use`RS`from`.model`*`area`.

`CJ`=*x*- Zero-bias junction capacitance. This
overrides
`CJ`in the`.model`, and is not affected by`area`. Default: use`CJ`from`.model`*`area`.

`CJSW`=*x*- Zero-bias sidewall capacitance. This
overrides
`CJSW`in the`.model`, and is not affected by`perim`. Default: use`CJSW`from`.model`*`perim`.

`GPARALLEL`=*x*- Parallel conductance. This overrides
`GParallel`in the`.model`, and is not affected by`area`. Default: use`GParallel`from`.model`*`area`.

`IS`=*x*- Normalized saturation current. (Amperes).
(Default = 1.0e-14)
`IS`is multiplied by the*area*in the element statement to get the actual saturation current. It may be overridden by specifying`IS`in the element statement.

`RS`=*x*- Normalized ohmic resistance. (Ohms) (Default
= 0.)
`RS`is multiplied by the*area*in the element statement to get the actual ohmic resistance. It may be overridden by specifying`RS`in the element statement.

`N`=*x*- Emission coefficient. (Default = 1.0) In
ECA-2 the default value was 2.

`TT`=*x*- Transit time. (Default = 0.) The diffusion
capacitance is given by:
*c*_{d}=*TT**g*_{d}where*g*_{d}is the diode conductance.

`VJ`=*x*- Junction potential. (Default = 1.0) Used in
computation of capacitance. For compatibility with older versions
of SPICE,
`PB`is accepted as an alias for`VJ`.

`CJO`=*x*- Normalized zero-bias depletion capacitance.
(Default = 0.)
`CJo`is multiplied by the*area*in the element statement to get the actual zero-bias capacitance. It may be overridden by specifying`CJ`in the element statement.

`MJ`=*x*- Grading coefficient. (Default = 0.5)

`PBSW`=*x*- Sidewall junction potential. (Default =
PB)

`CJSW`=*x*- Normalized zero-bias sidewall capacitance.
(Default = 0.)
`CJSw`is multiplied by the*perimeter*in the element statement to get the actual zero-bias capacitance. It may be overridden by specifying`CJSW`in the element statement.

`MJSW`=*x*- Sidewall grading coefficient. (Default =
0.33)

`EG`=*x*- Activation energy. (electron Volts) (Default
= 1.11, silicon.) For other types of diodes, use:
1.11 ev. Silicon (default value)

0.69 ev. Schottky barrier

0.67 ev. Germanium

1.43 ev. GaAs

2.26 ev. GaP

`XTI`=*x*- Saturation current temperature exponent.
(Default = 3.0) For Schottky barrier, use 2.0.

`KF`=*x*- Flicker noise coefficient. (Default = 0.)
SPICE parameter accepted but not implemented.

`AF`=*x*- Flicker noise exponent. (Default = 1.0)
SPICE parameter accepted but not implemented.

`FC`=*x*- Coefficient for forward bias depletion
capacitance formula. (Default = 0.5)

`BV`=*x*- Reverse breakdown voltage. (Default =
∞.) SPICE parameter accepted but not implemented.

`IBV`=*x*- Current at breakdown voltage. (Default = 1
ma.) SPICE parameter accepted but not implemented.

`GPARALLEL`=*x*- Parallel conductance. (Default = 0.)

`VD`- Voltage. The first node (anode) is assumed positive.

`ID`- Total current. It flows into the first node (anode),
out of the second (cathode). I(Dxxxx) is the same as IJ(Dxxxx) +
IC(Dxxxx).

`VJ`- Junction voltage. The voltage across the junction,
excluding the series resistance.

`VSR`- Resistive voltage. The voltage across the series
resistance, excluding the junction voltage.

`IJ`- Junction current. The current through the junction.
IJ(Dxxxx) is the same as I(Yj.Dxxxx).

`IC`- Capacitor current. The current through the parallel
capacitor. IC(Dxxxx) is the same as I(Cj.Dxxxx).

`P`- Power. P(Dxxxx) is the same as PJ(Dxxxx) + PC(Dxxxx).

`PD`- Power dissipated. The power dissipated as heat. It
is always positive and does not include power sourced. It should be
the same as P because the diode is passive.

`PS`- Power sourced. The power sourced by the part. It is
always positive and does not consider its own dissipation. It
should be 0 because the diode is passive.

`PJ`- Junction power. PJ(Dxxxx) is the same as P(Yj.Dxxxx).

`PC`- Capacitor power. PC(Dxxxx) is the same as
P(Cj.Dxxxx).

`CAPACITANCE`- Effective capacitance. C(Dxxxx) is the same
as Capacitance(Cj.Dxxxx).

`CHARGE`- Charge stored in the diode's capacitance.
It is the same as charge(Cj.Dxxxx).

`REQ`- Effective resistance. R(Dxxxx) is the same as
R(Yj.Dxxxx).

`GEQ`- Effective conductance. 1/
`req`.

`Z`- Impedance at a port. The port impedance seen looking
into the circuit across the branch. It does not include the part
itself. In transient analysis, it shows the effective Z-domain
impedance, which is a meaningless number if there are capacitors or
inductors in the circuit. (DC only)

`ZRAW`- Impedance at a port, raw. This is the same as “Z”
except that it includes the part itself. (DC only)

`REGION`- Region code. A numeric code that represents the region it is operating in. +1 = forward, -1 = reversed, 0 = unknown, -2 = assumed off.

In this release, there are no probes available in AC analysis except for the internal elements.

The general element probes do not apply to diodes, but do apply to the internal elements.