2D GaAs MESFET
A 2D Gallium Arsenide MESFET has been simulated by means of Archimedes, in order to show its capabilities of simulating submicron MESFETs. This devices in made of Gallium Arsenide, and is simulated at 77 Kelvin (liquid Nitrogen temperature). Archimedes takes into account all the relevant scattering machanisms in such GaAs devices for such particular temperature conditions.
We report, in the following, various pictures showing the results for electrons at stationary state, while it, obviously, possibile to study the transient behaviour of such device by means of Archimedes. At the end of this page, we report the ASCII input file for the simulation of this particular device.
Here, we report the electron density in the GaAs MESFET for the total density, the GAMMA-valley density and the L-valley density respectively.
The energy of electrons, after 6 picoseconds, looks as in the following picture.
The electrostatic potential is reported below.
And, finally, we report the graphics for x- and y- electron velocity component respectively.
We report in the following the ASCII input file for the simulation of such a device by means of Archimedes.
# GaAs MESFET test-1
# This file simulate a GaAs MESFET at 77 Kelvin
TRANSPORT MC ELECTRONS
# Definition of the Impurity Concentration
# Definition of the doping concentration
DONORDENSITY 0. 0. 0.75e-6 0.2e-6 1.e22
DONORDENSITY 0. 0. 0.25e-6 0.2e-6 1.e24
DONORDENSITY 0.5e-6 0. 0.75e-6 0.2e-6 1.e24
# Definition of the various contacts
CONTACT LEFT 0.0 0.20e-6 INSULATOR 0.0
CONTACT RIGHT 0.0 0.20e-6 INSULATOR 0.0
CONTACT UP 0.0 0.20e-6 OHMIC 0.0 1.e24
CONTACT UP 0.25e-6 0.50e-6 SCHOTTKY -0.4
CONTACT UP 0.55e-6 0.75e-6 OHMIC 0.8 1.e24
CONTACT DOWN 0.0 0.75e-6 INSULATOR 0.0
# end of MESFET test-1