MESFET electron energy

2D Silicon Diode

A GNU head
MESFET eletric potential

A simple 2D diode has been simulated by means of Archimedes in order to test its capabilities and reliability. The diode is a simple n+-n-n+ diode with a channel lenght equal to 0.4 micron. The diode has two n+ regions of 0.3 micron, which means that the diode is 1.0 micron in total. The doping regions are n+=1.e23/m^3 and n=1.e21/m^3. The applied voltage is equal to 2.0 Volts.

The devices is defined by means of an input file which describes the doping regions, the boundary conditions, the applied voltage, the number of simulated particles and so on. The input ASCII file is reported at the end of this page, while various 2D pictures obtained using Archimedes are shown in the following.

In the following picture, the electron density is reported.

The electron energy is reported in the following.

The picture below shows the x-component of the electron velocity vector.

Finally, here is the picture of the potential.

The Archimedes input file for such a device simulation is reported in the following.

# Silicon DIODE test-1
# This file simulate a Silicon Diode.

# To run it type:
# archimedes diode.input

# www.southnovel.eu

MATERIAL SILICON
TRANSPORT MC ELECTRONS

FINALTIME 5.5e-12
TIMESTEP 0.0015e-12

XLENGTH 1.0e-6
YLENGTH 0.1e-6

XSPATIALSTEP 80
YSPATIALSTEP 25

# Definition of the doping concentration
# ======================================
DONORDENSITY      0. 0. 1.0e-6 0.1e-6 2.e21
DONORDENSITY      0. 0. 0.3e-6 0.1e-6 5.e23
DONORDENSITY      0.7e-6 0. 1.0e-6 0.1e-6 5.e23
ACCEPTORDENSITY 0. 0. 1.0e-6 0.1e-6 1.e20

# Definition of the various contacts
# ==================================
CONTACT LEFT 0.0 0.1e-6 OHMIC 0.0 5.e23
CONTACT RIGHT 0.0 0.1e-6 OHMIC 1.0 5.e23
CONTACT UP 0.0 1.0e-6 INSULATOR 0.0
CONTACT DOWN 0.0 1.0e-6 INSULATOR 0.0

NOQUANTUMEFFECTS
MAXIMINI
# SAVEEACHSTEP

LATTICETEMPERATURE 300.

STATISTICALWEIGHT 350

MEDIA 500

OUTPUTFORMAT GNUPLOT

# end of MESFET test-1

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