2D Silicon MOSFET
A 2D Silicon MOSFET has been simulated by means of Archimedes, in order to show its capabilities of simulating submicron MOSFETs. This devices in made of Silicon. Archimedes takes into account all the relevant scattering machanisms in such Silicon devices.
We report, in the following, various pictures showing the results for electrons at stationary state, while it, obviously, possibile to study the transient behaviour of such device by means of Archimedes. At the end of this page, we report the ASCII input file for the simulation of this particular device.
Here, we report the electron density in the MOSFET.
The energy of electrons, after 5 picoseconds, looks as in the following picture.
The electrostatic potential is reported below.
And, finally, we report the graphics for x- and y- electron velocity component respectively.
We report in the following the ASCII input file for the simulation of such a device by means of Archimedes.
# Silicon MOSFET test-1
TRANSPORT MC ELECTRONS
# Definition of the doping concentration
DONORDENSITY 0. 0. 0.6e-6 0.4e-6 1.e23
DONORDENSITY 0. 0.15e-6 0.1e-6 0.4e-6 3.e23
DONORDENSITY 0.5e-6 0.15e-6 0.6e-6 0.4e-6 3.e23
ACCEPTORDENSITY 0. 0. 0.6e-6 0.4e-6 1.e20
# Definition of the various contacts
CONTACT DOWN 0.0 0.6e-6 INSULATOR 0.0
CONTACT LEFT 0.0 0.4e-6 INSULATOR 0.0
CONTACT RIGHT 0.0 0.4e-6 INSULATOR 0.0
CONTACT UP 0.1e-6 0.2e-6 INSULATOR 0.0
CONTACT UP 0.4e-6 0.5e-6 INSULATOR 0.0
CONTACT UP 0.0 0.1e-6 OHMIC 0.0 3.e23
CONTACT UP 0.5e-6 0.6e-6 OHMIC 1.0 3.e23
OXYDE UP 0.2e-6 0.4e-6 0.06e-6 0.8
# end of MOSFET test-1